Title :
SEU Cross Sections of Hardened and Unhardened SiGe Circuits
Author :
Hansen, D.L. ; Chu, P. ; Jobe, K. ; McKay, A.L. ; Warren, H.P.
Author_Institution :
Boeing Satellite Dev. Center, Los Angeles, CA
Abstract :
Several simple circuits, implemented in both soft and hardened versions, were designed using IBM´s SiGe 5 HP technology. Heavy-ion and proton single event upset tests showed that the hardened circuits typically had a lower cross section, higher threshold LET and shorter upset duration. The increased threshold LET proved especially significant since it resulted in a decrease in proton cross section of an order of magnitude
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit testing; ion beam effects; proton effects; radiation hardening (electronics); BiCMOS; IBM HP technology; SEU cross sections; SiGe; hardened circuits; heavy-ion single event upset test; higher threshold LET; proton single event upset test; unhardened circuits; Circuit synthesis; Circuit testing; Cosmic rays; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Protons; Shift registers; Silicon germanium; Single event upset; Hardness by design; SEU; SiGe;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886213
