Title :
Simultaneous low-frequency relaxation and high-frequency microwave oscillation of a bulk GaAs c.w. oscillator
Author :
Jaskolski, S.V. ; Ishii, T.K.
Author_Institution :
Marquette University, Department of Electrical Engineering, Milwaukee, USA
fDate :
1/1/1967 12:00:00 AM
Abstract :
A new mode of operation of a Gunn-effect diode has been observed, where the bulk GaAs oscillator simultaneously generates a low-frequency relaxation oscillation and a microwave oscillation. This operational mode results from the dynamic path moving into and out of the negative-resistance region.
Keywords :
Gunn effect; gallium arsenide; oscillators; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670010
