Title :
Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells
Author :
Heidel, David F. ; Rodbell, Kenneth P. ; Oldiges, Phil ; Gordon, Michael S. ; Tang, Henry H K ; Cannon, Ethan H. ; Plettner, Cristina
Author_Institution :
IBM Res. Div., Yorktown Heights, NY
Abstract :
Experimental and modeling results are presented on the critical charge required to upset exploratory 65 nm silicon-on-insulator (SOI) circuits. Using a mono-energetic, collimated, beam of particles the charge deposition was effectively modulated and modeled
Keywords :
SRAM chips; alpha-particle effects; charge measurement; field effect logic circuits; field effect memory circuits; flip-flops; integrated circuit modelling; ion beam effects; radiation hardening (electronics); silicon-on-insulator; 65 nm; SOI; critical charge measurements; latches; memory cells; monoenergetic collimated particle beams; silicon-on-insulator circuits; single event upsets; CMOS technology; Charge measurement; Circuit simulation; Ion accelerators; Latches; Particle beams; SPICE; Semiconductor device modeling; Silicon on insulator technology; Single event upset; Critical charge; Qcrit; SER; SOI; single event upsets;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886223
