Title :
Proton Induced Single Event Upset in 6 T SOI SRAMs
Author :
Liu, Harry Y. ; Liu, Michael S. ; Hughes, Harold L.
Author_Institution :
Honeywell Defense & Space Syst., Plymouth, MN
Abstract :
This paper presents a method to estimate the saturated proton upset cross section for 6 T SOI SRAM cells from layout and technology parameters. The calculated proton upset cross section based on this method is in good agreement with test results for our 6 T SOI SRAM cells processed using 0.15 and 0.35 mum technologies
Keywords :
SRAM chips; proton effects; proton-nucleus reactions; silicon-on-insulator; (p,X); 0.15 micron; 0.35 micron; SOI SRAM cells; proton induced single event upset; saturated proton upset cross section; Argon; Cyclotrons; Energy exchange; Ionization; Laboratories; Paper technology; Protons; Random access memory; Single event upset; Testing; Heavy ion; proton; single event upset; upset cross section;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886218
