• DocumentCode
    870756
  • Title

    Proton Induced Single Event Upset in 6 T SOI SRAMs

  • Author

    Liu, Harry Y. ; Liu, Michael S. ; Hughes, Harold L.

  • Author_Institution
    Honeywell Defense & Space Syst., Plymouth, MN
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3502
  • Lastpage
    3505
  • Abstract
    This paper presents a method to estimate the saturated proton upset cross section for 6 T SOI SRAM cells from layout and technology parameters. The calculated proton upset cross section based on this method is in good agreement with test results for our 6 T SOI SRAM cells processed using 0.15 and 0.35 mum technologies
  • Keywords
    SRAM chips; proton effects; proton-nucleus reactions; silicon-on-insulator; (p,X); 0.15 micron; 0.35 micron; SOI SRAM cells; proton induced single event upset; saturated proton upset cross section; Argon; Cyclotrons; Energy exchange; Ionization; Laboratories; Paper technology; Protons; Random access memory; Single event upset; Testing; Heavy ion; proton; single event upset; upset cross section;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886218
  • Filename
    4033547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870756