Title :
Gunn-effect oscillators with vapour-grown contact layers
Author :
Bass, J.C. ; Edridge, A.L. ; Knight, J.R.
Author_Institution :
Plessey Co. Ltd., Allen Clark Research Centre, Towcester, UK
fDate :
1/1/1967 12:00:00 AM
Abstract :
A vapour phase epitaxy process is described for the growth of n+ gallium arsenide contact layers for Gunn-effect oscillators. X band oscillators incorporating these contacts have so far produced 30mW continuous power and efficiencies of 1.6%.
Keywords :
Gunn effect; III-V semiconductors; crystal growth; films; gallium arsenide; production; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670019
