Title :
Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors
Author :
Irom, Farokh ; Farmanesh, Farhad ; Kouba, Coy K.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed
Keywords :
integrated circuit measurement; microprocessor chips; radiation effects; silicon-on-insulator; 130 nm; 180 nm; 90 nm; Motorola silicon-on-insulator microprocessor; SOI PowerPC microprocessors; heavy ions effects; scaling trends; single-event upset; Clocks; Frequency; Microprocessors; Power generation; Semiconductor films; Silicon on insulator technology; Single event upset; Size measurement; Space technology; Voltage; Cyclotron; heavy ion; microprocessors; silicon on insulator;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.884383
