Long wavelength lasers on GaAs substrates

Author

Fehse, R. ; Marko, I. ; Adams, A.R.

Author_Institution

Phys. Dept., Univ. of Surrey Guildford, UK

Volume

150

Issue

6

fYear

2003

Firstpage

521

Lastpage

528

Abstract

A compact review is given of the development of the device performance of GaAs-based long wavelength diode lasers with emission wavelengths from 1.3 to 1.55 μm. The main focus is on GaInNAs quantum wells and InAs quantum dot lasers. However, the Ga(In)AsSb material system is also briefly considered. The latest results of the present authors are discussed in relation to the trends observed in the review. These suggest that Auger recombination is an important intrinsic recombination mechanism in both 1.3 μm GaInNAs-based quantum well and InAs-based quantum dot lasers.

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; reviews; 1.3 to 1.55 micron; Auger recombination; Ga(In)AsSb material system; GaAs; GaAs substrates; GaAs-based long wavelength diode lasers; GaInAsSb-GaAs; GaInNAs quantum wells; GaInNAs-GaAs; GaInNAs-based quantum well lasers; InAs quantum dot lasers; InAs-GaAs; InAs-based quantum dot lasers; device performance; emission wavelengths; intrinsic recombination mechanism; long wavelength lasers;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20030959

Filename

1262415