Title :
GaN-based p-i-n sensors with ITO contacts
Author :
Chang, S.J. ; Ko, T.K. ; Su, Y.K. ; Chiou, Y.Z. ; Chang, C.S. ; Shei, S.C. ; Sheu, J.K. ; Lai, W.C. ; Lin, Y.C. ; Chen, W.S. ; Shen, C.F.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2006 12:00:00 AM
Abstract :
Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; p-i-n photodiodes; photodetectors; semiconductor superlattices; wide band gap semiconductors; 355 nm; 500 C; 70 nm; AlGaN-GaN:Mg; ITO contacts; InSnO; dark current; indium-tin-oxide electrodes; nitride-based p-i-n sensors; photodetectors; reverse breakdown voltage; strain layer superlattice structure; Aluminum gallium nitride; Annealing; Capacitive sensors; Dark current; Electrodes; Gallium nitride; Indium tin oxide; PIN photodiodes; Sensor phenomena and characterization; Superlattices; GaN; indium–tin–oxide (ITO); p-i-n; photodetectors; strain layer superlattice (SLS);
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2006.870151
