GaN-based p-i-n sensors with ITO contacts

Author

Chang, S.J. ; Ko, T.K. ; Su, Y.K. ; Chiou, Y.Z. ; Chang, C.S. ; Shei, S.C. ; Sheu, J.K. ; Lai, W.C. ; Lin, Y.C. ; Chen, W.S. ; Shen, C.F.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

6

Issue

2

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

406

Lastpage

411

Abstract

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; p-i-n photodiodes; photodetectors; semiconductor superlattices; wide band gap semiconductors; 355 nm; 500 C; 70 nm; AlGaN-GaN:Mg; ITO contacts; InSnO; dark current; indium-tin-oxide electrodes; nitride-based p-i-n sensors; photodetectors; reverse breakdown voltage; strain layer superlattice structure; Aluminum gallium nitride; Annealing; Capacitive sensors; Dark current; Electrodes; Gallium nitride; Indium tin oxide; PIN photodiodes; Sensor phenomena and characterization; Superlattices; GaN; indium–tin–oxide (ITO); p-i-n; photodetectors; strain layer superlattice (SLS);

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2006.870151

Filename

1608083