Solution processing of active semiconducting polymers and conducting polymer anodes for fabricating photodetectors

The light-detecting properties were studied for devices fabricated by a method involving screen-printing of an active semiconducting polymer layer. The active layer in the device is a blend consisting of an intrinsically n-type polymer poly(benzimidazobenzophenanthroline) dispersed in a matrix of intrinsically p-type polymer poly(3-octylthiophene). The anode in the device is a doped conducting polymer. The photocarrier generation efficiencies in the active layer are enhanced due to formation of donor-acceptor networks at small length scales. The solution processing is advantageous in forming devices on flexible and curved substrates.