Title :
Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices
Author :
Laird, Jamie S. ; Hirao, Toshio ; Onoda, Shinobu ; Itoh, Hisayoshi ; Johnston, Allan
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
We illustrate inherent subtle differences between Single Event Transients generated by above bandgap picosecond lasers and MeV heavy ions in a Si junction by comparing transient currents collected on a p-i-n structure using an MeV ion microbeam and picosecond laser with variable spot size. Differences between the ion and laser results are discussed and Synopsis Technology CAD simulations are employed to examine differences in plasma dynamics leading to the observed transient current dependence on initial track conditions
Keywords :
elemental semiconductors; ion beam effects; semiconductor device models; semiconductor heterojunctions; semiconductor lasers; silicon; technology CAD (electronics); Si; bandgap picosecond laser; heavy ion induced single event transients; high-speed Si photonic devices; initial track conditions; ion microbeam; p-i-n structure; plasma dynamics; synopsis technology CAD simulations; transient current dependence; Circuits; Gallium arsenide; III-V semiconductor materials; MESFETs; Microelectronics; Optical pulse generation; Photonic band gap; Plasma simulation; Semiconductor lasers; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886007
