Title :
Analytic model for field-plate-edge breakdown of planar devices terminated with field plate and semiresistive layer
Author_Institution :
Div. of Comput., Electron. & Telecommun. Eng., Yanbian Univ. of Sci. & Technol., St.Yanji City, China
Abstract :
An analytic model for calculating the surface field of high-voltage devices terminated with a field plate and SIPOS (semiresistive polycrystalline) layer is presented. This allows determination of the breakdown voltage at the field-plate edge in terms of the field-plate length, the effective length of the SIPOS layer, the thickness of oxide buffer layer, and the silicon doping concentration. The results show a fair agreement with the numerical simulations as well as the experimental results reported.
Keywords :
electric fields; power semiconductor devices; semiconductor device breakdown; semiconductor device models; SIPOS layer effective length; breakdown voltage; device breakdown analytic model; field plate terminated devices; field-plate length; field-plate-edge breakdown; high-voltage device surface field; high-voltage power devices; oxide buffer layer thickness; planar devices; semiresistive layer terminated devices; silicon doping concentration;
Journal_Title :
Science, Measurement and Technology, IEE Proceedings -
DOI :
10.1049/ip-smt:20030852