The Comparative Performance of FET and Bipolar Transistors at VHF

The relative performance of FET and bipolar transistors 200 MHz AGC amplifiers in a TV tuner is discussed. It is concluded that both junction and insulated gate FET´s have better overload capability than the bipolar transistor though they have a lower stable gain. The noise figure of the IG FET increases less rapidly with AGC than does the noise figure of the bipolar transistor. The performance of all three semiconductor devices is compared with that of a popular vacuum tube (6DS4) in its tuner.