Title :
Flicker noise in silicon planar transistors
Author :
Faulkner, E.A. ; Harding, D.W.
Author_Institution :
University of Reading, J.J. Thomson Physical Laboratory, Reading, UK
fDate :
2/1/1967 12:00:00 AM
Abstract :
Flicker noise may be characterised by a single parameter ¿F, which is the frequency at which flicker noise becomes equal to shot noise. Many devices show ¿F to be as low as 60 Hz, and give a noise figure of <1dB at 25 Hz. This is not in accordance with a recently published formula.
Keywords :
noise; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670056
