Title :
Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides
Author :
Hughes, R.C. ; Seager, C.H.
Abstract :
A computer model for calculating radiation effects in MOS oxides is presented. Good agreement is obtained between theory and photoconductivity experiments (photo-current and flat band shift as a function of total dose) on Sandia radiation hard oxides. It is also shown that doses above 108 rads (delivered by a focused electron beam) are required to produce a significant number of new defect traps.
Keywords :
Charge carrier processes; Charge measurement; Current measurement; Dielectrics; Electron traps; Microelectronics; Photoconductivity; Radiation effects; Radiative recombination; Space charge;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333079
