Title :
Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?
Author :
Brown, D.B. ; Ma, D.I. ; Dozier, C.M. ; Peckerar, M.C.
Author_Institution :
Naval Research Laboratory Washington, DC 20375 (202)767-2154
Abstract :
Annealing of defects in bulk fused silicas suggests the rate-limiting step is diffusion of molecular species. Evidence that similar processes occur in MOS devices is presented. A systematic dependence on gate size is shown.
Keywords :
Annealing; Hydrogen; Interface states; Laboratories; MOS devices; Paramagnetic resonance; Production; Silicon compounds; Temperature; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333081
