Title :
Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure
Author :
Metcalfe, J. ; Dorfan, D.E. ; Grillo, A.A. ; Jones, A. ; Lucia, D. ; Martinez-McKinney, F. ; Mendoza, M. ; Rogers, M. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Wilder, M. ; Cressler, J.D. ; Prakash, G. ; Sutton, A.
Author_Institution :
Santa Cruz Inst. for Particle Phys., California Univ., Santa Cruz, CA
Abstract :
For the potential use in future high luminosity applications in high energy physics (HEP) [e.g., the Large Hadron Collider (LHC) upgrade], we evaluated the radiation tolerance of a candidate technology for the front-end of the readout application-specific integrated circuit (ASIC) for silicon strip detectors. The devices investigated were first-generation silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The current gain as a function of collector current has been measured at several stages: before and after irradiation with 24-GeV protons up to fluences of 1016 p/cm2, and after annealing at elevated temperature. The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. We discuss the behavior of both kinds of transistors, with a particular focus on issues of noise, power, and radiation limitations
Keywords :
Ge-Si alloys; annealing; application specific integrated circuits; heterojunction bipolar transistors; proton effects; readout electronics; semiconductor materials; silicon radiation detectors; 24 GeV; ASIC; HEP; LHC; Large Hadron Collider; amplifier; annealing; first-generation silicon-germanium heterojunction bipolar transistors; gain measurement; high energy physics; high luminosity applications; integrated circuits; noise; proton irradiation; radiation tolerance; readout application-specific integrated circuit; signal-level discrimination; silicon strip detectors; special front transistor; Application specific integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Large Hadron Collider; Noise shaping; Protons; Radiation detectors; Silicon germanium; Strips; Annealing; bipolar transistors; gain measurement; germanium; integrated circuits; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.883949