DocumentCode :
871295
Title :
Gate Influence on the Layout Sensitivity of \\hbox {Si}_{1 - x}\\hbox {Ge}_{x} \\hbox {S/D} and \\hbox </div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Eneman, Geert ; Simoen, Eddy ; Verheyen, Peter ; Meyer, Kristin De</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>55</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2008</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2703</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2711</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We present a simulation study on the effect of the gate module on the channel stress in Si<sub>1-x</sub>Ge<sub>x</sub> and Si<sub>1-y</sub>C<sub>y</sub> S/D MOS transistors. Stiff gate materials, such as titanium nitride, lead to a decreased channel stress, while a replacement-gate scheme allows the increase of the effectiveness of the Si<sub>1-x</sub>Ge<sub>x</sub> and Si<sub>1-y</sub>C<sub>y</sub> S/D techniques significantly, independent of the gate material used. The drawback of using a replacement gate is that the channel stress becomes more sensitive to layout variations. In terms of effect on Si<sub>1-x</sub>Ge<sub>x</sub>/Si<sub>1-y</sub>C<sub>y</sub> S/D stress generation, using a thin metal gate capped by polysilicon is similar to a full metal gate if the thin metal gate thickness exceeds 10 nm. Even metal gates as thin as 1 nm have a clear influence on the stress generation by Si<sub>1-x</sub>Ge<sub>x</sub>/Si<sub>1-y</sub>C<sub>y</sub> S/D. Removing and redepositing the polysilicon layer while leaving the underlying metal gate unchanged increases the stress, although not to the same extent as for complete gate removal. A simple analytical model that estimates the stress in nested short-channel Si<sub>1-x</sub>Ge<sub>x</sub> and Si<sub>1-y</sub>C<sub>y</sub> S/D transistors is presented. This model includes the effect of germanium/carbon concentration, active-area length, as well as the effect of gate length and the Young´s modulus of the gate. Good qualitative agreement with 2-D finite element modeling is demonstrated.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Ge-Si alloys; MOSFET; Young´s modulus; finite element analysis; semiconductor device models; semiconductor materials; silicon compounds; stress analysis; 2-D finite element modeling; MOS transistors; MOSFET; Si<sub>1-x</sub>Ge<sub>x</sub>; Si<sub>1-y</sub>C<sub>y</sub>; Young´s modulus; active-area length; carbon concentration; channel stress; gate length; gate materials; gate module effect; germanium concentration; layout sensitivity; replacement-gate scheme; stress generation; titanium nitride; Analytical models; CMOS process; CMOS technology; Compressive stress; Etching; Germanium; MOSFETs; Microelectronics; Silicon; Tensile stress; MOSFET; SiC; SiGe; strained silicon;</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2008.2003231</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4631393</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=871295' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=871295</a></div> </div> </div> <div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=