Title :
Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics
Author :
Najafizadeh, Laleh ; Bellini, Marco ; Prakash, A. P Gnana ; Espinel, Gustavo A. ; Cressler, John D. ; Marshall, Paul W. ; Marshall, Cheryl J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments
Keywords :
BiCMOS analogue integrated circuits; heterojunction bipolar transistors; proton effects; 200 GHz; 293 to 298 K; 50 GHz; 77 K; BiCMOS analog integrated circuits; SiGe BiCMOS precision voltage references; SiGe bandgap references; SiGe mixed-signal circuits; cryogenic temperatures; extreme environment operational conditions; extreme temperature range electronics; heterojunction bipolar transistors; proton irradiation effects; voltage reference circuits; CMOS technology; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Moon; Protons; Silicon germanium; Space technology; Temperature distribution; Voltage; BiCMOS analog integrated circuits; heterojuction bipolar transistors; proton radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885381
