Title :
Quantifying the Double-Sided Neutron SEU Threat, From Low Energy (Thermal) and High Energy ( > 10 MeV) Neutrons
Author :
Normand, E. ; Vranish, K. ; Sheets, A. ; Stitt, M. ; Kim, R.
Author_Institution :
Boeing Radiat. Effects Lab., Seattle, WA
Abstract :
We quantify the SEU rate induced by neutrons in current devices, from both low energy (thermal) and high energy neutrons. New measured SEU cross sections from both kinds of neutrons in SRAMs, DRAMs and microprocessors are included
Keywords :
DRAM chips; SRAM chips; neutron effects; semiconductor devices; BPSG; DRAMs; SRAMs; atmospheric neutron flux; double-sided neutron SEU; high energy neutrons; microprocessors; single event upset; thermal neutrons; Aerospace electronics; Aerospace industry; Manufacturing industries; Microprocessors; NIST; Neutrons; Particle beams; Random access memory; Single event upset; Testing; Atmospheric neutron flux; BPSG; avionics SEU; neutron SEU; thermal neutrons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886209
