High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

Author

Raskin, Jean-Pierre ; Pailloncy, Guillaume ; Lederer, Dimitri ; Danneville, François ; Dambrine, Gilles ; Decoutere, Stefaan ; Mercha, Abdelkarim ; Parvais, Bertrand

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

Volume

55

Issue

10

fYear

2008

Firstpage

2718

Lastpage

2727

Abstract

In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of FinFETs is reported. The impact of the geometrical dimensions of FinFETs on RF noise parameters such as the channel length, the fin width, as well as the fin number is analyzed. A minimum noise figure of 1.35 dB is obtained with an associated available gain of 13.5 dB at 10 GHz for V_dd = 0.5 V. This result is quite encouraging to bring solutions for future low-power RF systems.

Keywords

MOSFET; low-power electronics; microwave transistors; nanoelectronics; semiconductor device noise; FinFET; RF noise parameters; channel length; fin number; fin width; frequency 10 GHz; gain 13.5 dB; geometrical dimension; high-frequency noise performance; low-power RF systems; noise figure 1.35 dB; radiofrequency noise; size 60 nm; voltage 0.5 V; CMOS technology; Circuit noise; FinFETs; Implants; MOSFETs; Radio frequency; Semiconductor device noise; Silicidation; Threshold voltage; Transconductance; $S$ -parameters; FinFETs; high-frequency noise; microwave characterization; small-signal modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2003097

Filename

4631401