• DocumentCode
    871383
  • Title

    1 MeV Electron Radiation Effects in SnO2 - SiO2 - Silicon Solar Cells

  • Author

    Thayer, Matthew L. ; Anderson, Wayne A.

  • Author_Institution
    Department of Electrical and Computer Engineering State University of New York at Buffalo 4232 Ridge Lea Road Amherst, New York 14226
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4169
  • Lastpage
    4172
  • Abstract
    High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 × 1015 e-/cm2. These stable terrestrial cells had a critical fluence of 1 × 1013 e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 ¿-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 × 1016 e-/cm2. SIS cells on p-type Si should show improved response.
  • Keywords
    Degradation; Electrons; Length measurement; Photovoltaic cells; Photovoltaic systems; Radiation effects; Silicon; Solar power generation; Spraying; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333102
  • Filename
    4333102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871383