Title :
1 MeV Electron Radiation Effects in SnO2 - SiO2 - Silicon Solar Cells
Author :
Thayer, Matthew L. ; Anderson, Wayne A.
Author_Institution :
Department of Electrical and Computer Engineering State University of New York at Buffalo 4232 Ridge Lea Road Amherst, New York 14226
Abstract :
High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 × 1015 e-/cm2. These stable terrestrial cells had a critical fluence of 1 × 1013 e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 ¿-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 × 1016 e-/cm2. SIS cells on p-type Si should show improved response.
Keywords :
Degradation; Electrons; Length measurement; Photovoltaic cells; Photovoltaic systems; Radiation effects; Silicon; Solar power generation; Spraying; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333102
