Title :
SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory
Author :
Oldham, T.R. ; Ladbury, R.L. ; Friendlich, M. ; Kim, H.S. ; Berg, M.D. ; Irwin, T.L. ; Seidleck, C. ; LaBel, K.A.
Author_Institution :
QSS Group, Inc, Seabrook, MD
Abstract :
An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode
Keywords :
CMOS integrated circuits; NAND circuits; flash memories; ion beam effects; CMOS; TID characterization; advanced commercial 2Gbit NAND flash memory; dynamic failure mode; electronics; heavy ion SEE characterization; nonvolatile memory; radiation effects; single event effects; total ionizing dose; Flash memory; Ionizing radiation; Manufacturing; NASA; Nonvolatile memory; Packaging; Plastics; Radiation effects; Space technology; Testing; CMOS; electronics; nonvolatile memory; radiation effects; single event effects; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885843
