• DocumentCode
    871384
  • Title

    SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

  • Author

    Oldham, T.R. ; Ladbury, R.L. ; Friendlich, M. ; Kim, H.S. ; Berg, M.D. ; Irwin, T.L. ; Seidleck, C. ; LaBel, K.A.

  • Author_Institution
    QSS Group, Inc, Seabrook, MD
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3217
  • Lastpage
    3222
  • Abstract
    An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode
  • Keywords
    CMOS integrated circuits; NAND circuits; flash memories; ion beam effects; CMOS; TID characterization; advanced commercial 2Gbit NAND flash memory; dynamic failure mode; electronics; heavy ion SEE characterization; nonvolatile memory; radiation effects; single event effects; total ionizing dose; Flash memory; Ionizing radiation; Manufacturing; NASA; Nonvolatile memory; Packaging; Plastics; Radiation effects; Space technology; Testing; CMOS; electronics; nonvolatile memory; radiation effects; single event effects; total ionizing dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.885843
  • Filename
    4033786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871384