Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook

Author

Bellotti, Enrico ; Bertazzi, Francesco ; Shishehchi, Sara ; Matsubara, Masaki ; Goano, Michele

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3204

Lastpage

3215

Abstract

In this paper, we describe the state of the art in the numerical simulation of the carrier transport properties of GaN and its ternary alloys. We outline the characteristics of our state of the art full-band Monte Carlo model that includes a fitting parameter free approach to compute the carrier-phonon interaction and a full quantum mechanical model for multiband transport which is critical to understand the high-field transport properties of these materials. Finally, we provide several examples of applications of the model to the calculation of the low-field electron mobility of GaN and In_0.18Al_0.82N, drift velocity in GaN and the impact ionization coefficients in Al_xGa_1-xN alloys.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; electron mobility; gallium compounds; impact ionisation; indium compounds; wide band gap semiconductors; AlGaN; GaN; III-nitride materials; InAlN; carrier transport model; carrier-phonon interaction; drift velocity; full-band Monte Carlo model; impact ionization coefficients; low-field electron mobility; multiband transport; quantum mechanical model; ternary alloys; AlGaN; GaN; InAlN; Monte Carlo transport simulation; density functional theory; electronic structure;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2266577

Filename

6547177