• DocumentCode
    871413
  • Title

    Transient Radiation Effects on Silicon MESFET Integrated Circuits

  • Author

    Shedd, W.M. ; Sampson, J.L. ; Lapierre, D.C.

  • Author_Institution
    Rome Air Development Center Solid State Sciences Division Hanscom AFB MA 01731
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4183
  • Lastpage
    4186
  • Abstract
    An experimental evaluation of the transient radiation upset threshold of silcon MESFET circuits has been performed. Upset thresholds in the range of 2 to 6×108 rad/sec have been observed for shift registers and 1 to 5×107 rad/sec for 1K static memory arrays.
  • Keywords
    Circuit testing; Logic testing; MESFET circuits; MESFET integrated circuits; Master-slave; Radiation effects; Random access memory; Read-write memory; Shift registers; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333105
  • Filename
    4333105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871413