Title :
Transient Radiation Effects on Silicon MESFET Integrated Circuits
Author :
Shedd, W.M. ; Sampson, J.L. ; Lapierre, D.C.
Author_Institution :
Rome Air Development Center Solid State Sciences Division Hanscom AFB MA 01731
Abstract :
An experimental evaluation of the transient radiation upset threshold of silcon MESFET circuits has been performed. Upset thresholds in the range of 2 to 6×108 rad/sec have been observed for shift registers and 1 to 5×107 rad/sec for 1K static memory arrays.
Keywords :
Circuit testing; Logic testing; MESFET circuits; MESFET integrated circuits; Master-slave; Radiation effects; Random access memory; Read-write memory; Shift registers; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333105
