DocumentCode :
871428
Title :
A Radiation Hardened Gate Array Family Using an Advanced Di Bipolar Technology
Author :
Wood, G.M. ; Sanders, T.J. ; Casey, R.H.
Author_Institution :
Harris Semiconductor Melbourne, Florida 32901
Volume :
30
Issue :
6
fYear :
1983
Firstpage :
4187
Lastpage :
4191
Abstract :
Gate arrays have been used for several years to provide a systems designer with a low cost fast turn option in obtaining custom LSI logic circuits. This paper describes a new family of TTL compatible bipolar arrays which have been optimized for radiation hardness.
Keywords :
Circuits; Conductivity; Dielectric thin films; Geometry; Large scale integration; Logic arrays; Neutrons; Photoconductivity; Radiation hardening; Resistors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1983.4333106
Filename :
4333106
Link To Document :
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