DocumentCode :
871450
Title :
Characterization of a Novel 100-Channel Silicon Photomultiplier—Part II: Charge and Time
Author :
Finocchiaro, Paolo ; Pappalardo, Alfio ; Cosentino, Luigi ; Belluso, Massimiliano ; Billotta, Sergio ; Bonanno, Giovanni ; Carbone, Beatrice ; Condorelli, Giovanni ; Di Mauro, Salvatore ; Fallica, Giorgio ; Mazzillo, Massimo ; Piazza, Alessandro ; Sanfili
Author_Institution :
INFN, Lab. Naz. del Sud, Catania
Volume :
55
Issue :
10
fYear :
2008
Firstpage :
2765
Lastpage :
2773
Abstract :
In this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, a timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured as a function of the bias voltage and of the incident photon flux. A dedicated data analysis procedure was developed that allows to extract at once the relevant parameters from the amplitude spectra and to determine the timing features.
Keywords :
elemental semiconductors; photomultipliers; silicon; Si; incident photon flux; photomultiplier; photon-detection efficiency; single-photon resolving power; Avalanche photodiodes; Data analysis; Laboratories; Performance evaluation; Photomultipliers; Photonics; Silicon; Testing; Timing; Voltage; Afterpulsing; dark noise; gain; quantum detection efficiency; quenching resistor; silicon photomultiplier (SiPM); single-photon avalanche photodiode; single-photon counting;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2003235
Filename :
4631409
Link To Document :
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