DocumentCode :
871452
Title :
Silicon Transistor Biasing for Linear Collector Current Temperature Dependence
Author :
Brugler, J.S.
Volume :
2
Issue :
2
fYear :
1967
fDate :
6/1/1967 12:00:00 AM
Firstpage :
57
Lastpage :
58
Abstract :
The silicon transistor base bias voltage necessary for linearly increasing collector current with temperature is derived. A constant voltage is shown to be adequate in practical applications, enabling temperature-independent small-signal diode conductance to be simply obtained.
Keywords :
Linear circuits; Silicon materials/devices; Transistors; Delay; Equations; Feedback circuits; Hysteresis; Negative feedback; Resistors; Silicon; Switching circuits; Temperature dependence; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1967.1049790
Filename :
1049790
Link To Document :
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