Title :
Transient Radiation Effects at X-Band in GaAs FETs and ICs
Author :
Anderson, W.T., Jr. ; Binari, S.C.
Author_Institution :
Naval Research Laboratory, Washington, D. C. 20375
Abstract :
Transient radiation effects following 20-60 ns electron pulses were measured in GaAs FETs and ICs operating at X-band. Long-term transients in RF output power and drain current were observed in all devices and ICs except FETs fabricated with a buried p-layer. Only the prompt (20 ns) photocurrent response was observed in FETs with a buried p-layer. The long-term transients are explained by a model of substrate trapping and backgating.
Keywords :
Electrons; FETs; Gallium arsenide; Integrated circuit noise; Intrusion detection; Ionizing radiation; Linear particle accelerator; Logic; Pulse measurements; Radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333109
