Characterization of a Novel 100-Channel Silicon Photomultiplier—Part I: Noise

Author

Finocchiaro, Paolo ; Pappalardo, Alfio ; Cosentino, Luigi ; Belluso, Massimiliano ; Billotta, Sergio ; Bonanno, Giovanni ; Carbone, Beatrice ; Condorelli, Giovanni ; Mauro, Salvatore Di ; Fallica, Giorgio ; Mazzillo, Massimo ; Piazza, Alessandro ; Sanfili

Author_Institution

Lab. Naz. del Sud, INFN, Catania

Volume

55

Issue

10

fYear

2008

Firstpage

2757

Lastpage

2764

Abstract

In this paper, we present the results of the first noise characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon avalanche photodiode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured, as a function of the bias voltage and of the incident photon flux. A dedicated data-analysis procedure was developed that allows one to extract at once the relevant parameters and quantify the noise.

Keywords

elemental semiconductors; photodetectors; photomultipliers; semiconductor device noise; silicon; 100-channel silicon photomultiplier; Si; bias voltage; data-analysis procedure; incident photon flux; noise characterization; photon-detection efficiency; single-photon resolving power; timing resolution; wavelength 420 nm; Avalanche photodiodes; Cooling; Laboratories; Performance evaluation; Photomultipliers; Photonics; Semiconductor device noise; Silicon; Testing; Timing; Afterpulsing; dark noise; gain; quantum detection efficiency; quenching resistor; silicon photomultiplier (SiPM); single-photon avalanche photodiode (SPAD); single-photon counting;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2003996

Filename

4631410