• DocumentCode
    871482
  • Title

    Mechanism of Resistive Switching in 3, 4, 9, 10 Perylenetetracarboxylic Dianhydride (PTCDA) Sandwiched Between Metal Electrodes

  • Author

    Agrawal, Ruchi ; Kumar, Pramod ; Ghosh, Subhasis

  • Author_Institution
    Sch. of Phys. Sci., Jawaharlal Nehru Univ., New Delhi
  • Volume
    55
  • Issue
    10
  • fYear
    2008
  • Firstpage
    2795
  • Lastpage
    2799
  • Abstract
    Electrical-field-induced resistive transitions in thin films of perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to a conducting state with a high ON-OFF ratio, have been studied. Temperature dependence of resistivity and scanning tunneling spectroscopic studies show insulating behavior in OFF state and metallic behavior in ON state. Devices with a thin intermediate layer of LiF between metal electrode and organic layer, or devices fabricated in planar configuration, do not show switching behavior. All these suggest that conducting pathways are responsible for the electric- field-induced conductance transition.
  • Keywords
    electrical resistivity; metal-insulator transition; organic semiconductors; scanning tunnelling spectroscopy; semiconductor thin films; 3,4,9,10 perylenetetracarboxylic dianhydride; conducting state; electrical-field-induced resistive transitions; insulating state; metal electrodes; resistive switching; scanning tunneling spectroscopy; thin films; Electrodes; Energy consumption; Fabrication; Insulation; OFETs; Optical films; Organic light emitting diodes; Organic semiconductors; Semiconductor thin films; Substrates; Organic compounds; perylenetetracarboxylic dianhydride (PTCDA); resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2003222
  • Filename
    4631413