DocumentCode :
871482
Title :
Mechanism of Resistive Switching in 3, 4, 9, 10 Perylenetetracarboxylic Dianhydride (PTCDA) Sandwiched Between Metal Electrodes
Author :
Agrawal, Ruchi ; Kumar, Pramod ; Ghosh, Subhasis
Author_Institution :
Sch. of Phys. Sci., Jawaharlal Nehru Univ., New Delhi
Volume :
55
Issue :
10
fYear :
2008
Firstpage :
2795
Lastpage :
2799
Abstract :
Electrical-field-induced resistive transitions in thin films of perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to a conducting state with a high ON-OFF ratio, have been studied. Temperature dependence of resistivity and scanning tunneling spectroscopic studies show insulating behavior in OFF state and metallic behavior in ON state. Devices with a thin intermediate layer of LiF between metal electrode and organic layer, or devices fabricated in planar configuration, do not show switching behavior. All these suggest that conducting pathways are responsible for the electric- field-induced conductance transition.
Keywords :
electrical resistivity; metal-insulator transition; organic semiconductors; scanning tunnelling spectroscopy; semiconductor thin films; 3,4,9,10 perylenetetracarboxylic dianhydride; conducting state; electrical-field-induced resistive transitions; insulating state; metal electrodes; resistive switching; scanning tunneling spectroscopy; thin films; Electrodes; Energy consumption; Fabrication; Insulation; OFETs; Optical films; Organic light emitting diodes; Organic semiconductors; Semiconductor thin films; Substrates; Organic compounds; perylenetetracarboxylic dianhydride (PTCDA); resistive switching;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2003222
Filename :
4631413
Link To Document :
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