DocumentCode
871482
Title
Mechanism of Resistive Switching in 3, 4, 9, 10 Perylenetetracarboxylic Dianhydride (PTCDA) Sandwiched Between Metal Electrodes
Author
Agrawal, Ruchi ; Kumar, Pramod ; Ghosh, Subhasis
Author_Institution
Sch. of Phys. Sci., Jawaharlal Nehru Univ., New Delhi
Volume
55
Issue
10
fYear
2008
Firstpage
2795
Lastpage
2799
Abstract
Electrical-field-induced resistive transitions in thin films of perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to a conducting state with a high ON-OFF ratio, have been studied. Temperature dependence of resistivity and scanning tunneling spectroscopic studies show insulating behavior in OFF state and metallic behavior in ON state. Devices with a thin intermediate layer of LiF between metal electrode and organic layer, or devices fabricated in planar configuration, do not show switching behavior. All these suggest that conducting pathways are responsible for the electric- field-induced conductance transition.
Keywords
electrical resistivity; metal-insulator transition; organic semiconductors; scanning tunnelling spectroscopy; semiconductor thin films; 3,4,9,10 perylenetetracarboxylic dianhydride; conducting state; electrical-field-induced resistive transitions; insulating state; metal electrodes; resistive switching; scanning tunneling spectroscopy; thin films; Electrodes; Energy consumption; Fabrication; Insulation; OFETs; Optical films; Organic light emitting diodes; Organic semiconductors; Semiconductor thin films; Substrates; Organic compounds; perylenetetracarboxylic dianhydride (PTCDA); resistive switching;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2003222
Filename
4631413
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