Title :
A Radiation-Hardened 16K-BIT MNOS EAROM
Author :
Knoll, M.G. ; Dellin, T.A. ; Jones, R.V.
Author_Institution :
Sandia National Laboratories Albuquerque, New Mexico 87185
Abstract :
A radiation-hardened silicon-gate CMOS/NMNOS 16K-bit EAROM has been designed, fabricated, and evaluated. This memory has been designed to be used as a ROM replacement in radiation-hardened microprocessor-based systems.
Keywords :
CMOS memory circuits; CMOS technology; EPROM; Electron traps; Laboratories; Read only memory; Registers; Silicon; TV; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333112
