DocumentCode :
871500
Title :
Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor Family
Author :
Kim, W.S. ; Mnich, T.M. ; Corbett, W.T. ; Treece, R.K. ; Giddings, A.E. ; Jorgensen, J.L.
Author_Institution :
Sandia National Laboratories Division 2115 P. O. Box 5800 Albuquerque, New Mexico 87185
Volume :
30
Issue :
6
fYear :
1983
Firstpage :
4229
Lastpage :
4234
Abstract :
A microprocessor family has been designed in radiation-hardened bulk, silicongate CMOS. The three main family members are logic emulations of Intel NMOS devices: SA3000, a general-purpose 8-bit central processing unit (CPU) (Intel 8085A); SA3001, a 256 × 8-bit static RAM with two 8-bit I/O ports, one 6-bit I/O port and a timer (Intel 8155/56); SA3002, a 2K × 8-bit ROM with two 8-bit I/O ports (Intel 8355). This paper describes the design principles and methodology used to realize fully static, fully complementary CMOS devices capable of withstanding more than one megarad total dose. These designs are latchup-free and are built on epitaxial substrates using a 3-micron gate length technology. In order to achieve this level of radiation tolerance, the radiation characteristics of the process must be measured and the radiation effects accommodated in all phases of the design.
Keywords :
CMOS logic circuits; CMOS technology; Central Processing Unit; Design methodology; Emulation; Logic devices; MOS devices; Microprocessors; Read only memory; Substrates;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1983.4333113
Filename :
4333113
Link To Document :
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