DocumentCode :
871576
Title :
Two Radiation-Hardened Analog Multiplexers
Author :
Williams, D.R. ; van Vonno, N.W.
Author_Institution :
Custom Integrated Circuits Division Harris Semiconductor Melbourne, FL 32901
Volume :
30
Issue :
6
fYear :
1983
Firstpage :
4273
Lastpage :
4276
Abstract :
A total dose radiation-resistant, high voltage CMOS process has been used to build both eight-and sixteen-channel analog multiplexers. The circuits are hardened versions of the Harris 508A and 1840 dielectrically isolated multiplexers, and meet all specifications of their non-hardened equivalents after total dose exposures of 100k and 200k rad(Si), respectively. The process, which yields circuits functional to a dose level of a megarad, is described. Circuit performance as a function of total dose is presented.
Keywords :
Breakdown voltage; CMOS process; Dielectrics; Digital circuits; Electric breakdown; Multiplexing; Operational amplifiers; Oxidation; Surges; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1983.4333121
Filename :
4333121
Link To Document :
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