DocumentCode :
871641
Title :
Impact ionization in cobalt-doped silicon
Author :
Ghandhi, S.K. ; Park, J.N.
Volume :
53
Issue :
6
fYear :
1965
fDate :
6/1/1965 12:00:00 AM
Firstpage :
635
Lastpage :
635
Keywords :
Cobalt; Electric breakdown; Impact ionization; Microwave devices; Pulse measurements; Semiconductor impurities; Silicon; Solids; Temperature; Testing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3949
Filename :
1445879
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=871641
