Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

Author

Liu, Sandra ; Boden, Milton ; Girdhar, Dev Alok ; Titus, Jeffrey L.

Author_Institution

Int. Rectifier Corp., El Segundo, CA

Volume

53

Issue

6

fYear

2006

Firstpage

3379

Lastpage

3385

Abstract

Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device´s avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy ion beam is only acting as a trigger. Simulation results on various 600 V and 250 V radiation-hardened power MOSFETs from International Rectifier are compared to an extensive set of single event effect test results and prove quasi-stationary avalanche simulation is capable of evaluating and predicting SEB susceptibility

Keywords

bipolar transistors; buffer layers; failure analysis; power MOSFET; radiation hardening (electronics); semiconductor device models; International Rectifier; buffer layer; devices avalanche characteristics; heavy ion beam; parasitic bipolar transistor; quasistationary avalanche simulations; radiation-hardened power MOSFETs; single-event burnout failure mechanism; single-event burnout susceptibility; Bipolar transistors; Buffer layers; Cranes; Discrete event simulation; Failure analysis; Ion beams; MOSFETs; Predictive models; Rectifiers; Testing; Avalanche simulations; MOSFET; R6; SEB; buffer layer; heavy ion beam; power DMOSFET; quasi-stationary; single-event burnout;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.884971

Filename

4033933