Title :
A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
Author :
Wang, G.W. ; Chen, Y.K. ; Radulescu, D.C. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Double quantum-well modulation-doped field-effect transistors (MODFETs) with planar-doped lattice-strained AlGaAs/InGaAs structure have been fabricated and characterized at DC and microwave frequencies. At 300 K the 0.3- mu m gate devices show a full channel current of 1100 mA/mm with a constant extrinsic transconductance of 350 mS/mm over a broad gate voltage range of 1.6 V. Excellent microwave performance is also achieved with a maximum available gain cutoff frequency f/sub mag/ of 110 GHz and a current gain cutoff frequency f/sub r/ of 52 GHz. A maximum output power of 0.7 W/mm with 30% efficiency is obtained at 18 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.3 micron; 0.7 W; 110 GHz; 18 GHz; 30 percent; 350 mS; 52 GHz; AlGaAs-InGaAs planar doped lattice strained structure; DC characteristics; available gain cutoff frequency; current gain cutoff frequency; double quantum-well MODFET; extrinsic transconductance; full channel current; gate length; microwave characteristics; output power; Cutoff frequency; Epitaxial layers; FETs; HEMTs; Indium gallium arsenide; MODFETs; Microwave frequencies; Performance gain; Quantum well devices; Quantum wells;
Journal_Title :
Electron Device Letters, IEEE
