Title :
Unusual C-V profiles of Si-implanted
Author :
Banerjee, Indrajit ; Chye, Patrick W. ; Gregory, Paul E.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
Abstract :
The C-V profiles of ion-implanted
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; electron device noise; gallium arsenide; ion implantation; silicon; solid-state microwave devices; substrates; 1 dB; 12 GHz; C-V profiles; GaAs:Si; GaAs:Si substrates; III-V semiconductor; MESFETs; doping profile; ion implantation; low noise figures; nonGaussian characteristics; Capacitance-voltage characteristics; Doping profiles; Electron mobility; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Noise figure; Noise measurement; Shape; Substrates;
Journal_Title :
Electron Device Letters, IEEE
