DocumentCode :
871721
Title :
Step-recovery action in transistors
Author :
Hayes, R.E.
Author_Institution :
Plessey Co. Ltd., Romsey, UK
Volume :
3
Issue :
4
fYear :
1967
fDate :
4/1/1967 12:00:00 AM
Firstpage :
151
Abstract :
A step-recovery action in the switch-off of certain transistors is reported. The abrupt edge generated is similar to that obtained using step-recovery diodes, but it has the advantage of the transistor current gain, which reduces the load on the driving source.
Keywords :
transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19670117
Filename :
4207177
Link To Document :
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