• DocumentCode
    871758
  • Title

    Beam-Lead Sealed-Junction Semiconductor Memory with Minimal Cell Complexity

  • Author

    Iwersen, John E. ; Wuorinen, John H., Jr. ; Murphy, Bernard T. ; D´Stefan, D.J.

  • Volume
    2
  • Issue
    4
  • fYear
    1967
  • fDate
    12/1/1967 12:00:00 AM
  • Firstpage
    196
  • Lastpage
    201
  • Abstract
    A novel 100-ns nondestructively-read semiconductor memory is described. Sixteen simple bipolar flip-flops are integrated on a 30 X 38 mil beam-leaded chip. Memory arrays are produced by bonding chips on large-area substrates. Performance of a 64-word 16-bits-per-word memory system is reported.
  • Keywords
    Large-scale integration; Semiconductor memories; Associate members; Bonding; Complexity theory; Flip-flops; Integrated circuit interconnections; Read-write memory; Resistors; Semiconductor memory; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1967.1049818
  • Filename
    1049818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871758