Title :
Beam-Lead Sealed-Junction Semiconductor Memory with Minimal Cell Complexity
Author :
Iwersen, John E. ; Wuorinen, John H., Jr. ; Murphy, Bernard T. ; D´Stefan, D.J.
fDate :
12/1/1967 12:00:00 AM
Abstract :
A novel 100-ns nondestructively-read semiconductor memory is described. Sixteen simple bipolar flip-flops are integrated on a 30 X 38 mil beam-leaded chip. Memory arrays are produced by bonding chips on large-area substrates. Performance of a 64-word 16-bits-per-word memory system is reported.
Keywords :
Large-scale integration; Semiconductor memories; Associate members; Bonding; Complexity theory; Flip-flops; Integrated circuit interconnections; Read-write memory; Resistors; Semiconductor memory; Substrates; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1967.1049818
