Title :
Counterdoping of MOS channel (CDC)-a new technique of improving suppression of latching in insulated gate bipolar transistors
Author :
Chow, T.P. ; Baliga, B.J. ; Pattanayak, Deva N.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
A novel technique of improving suppression of latching in insulated-gate bipolar transistors (IGBTs) is proposed and experimentally verified. By counterdoping the channel of the DMOS cell, the doping of the p-base can be increased up to a factor of two. Dynamic latching improvement of 40-80%, corresponding to the p-base doping increase, has been obtained. The degradation in forward blocking voltage was observed when the counterdoping dosage exceeds about 2*10/sup 12/ cm/sup -2/ for 600-V devices.<>
Keywords :
insulated gate field effect transistors; power transistors; semiconductor doping; DMOS cell; IGBTs; MOS channel counterdoping; dynamic latching; forward blocking voltage; insulated-gate bipolar transistors; latching suppression; p-base doping increase; Degradation; Impurities; Insulated gate bipolar transistors; Insulation; Semiconductor device doping; Substrates; Surface resistance; Threshold voltage; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
