Title :
A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors
Author :
Wu, Wei-Jing ; Yao, Ruo-He
Author_Institution :
Coll. of Mater. Sci. & Eng., South China Univ. of Technol., Guangzhou
Abstract :
Based on charge conservation assumption, analytical models of the drain-induced grain barrier lowering effect are developed for polysilicon films by 1-D Poisson´s equation and for polysilicon thin-film transistors (poly-Si TFTs) by quasi-2-D Poisson´s equation. It is shown that the voltage drop at the lower barrier side is less than that at the higher barrier side for both poly-Si films and poly-Si TFTs when applying a lateral bias across the grain-boundary barrier.
Keywords :
Poisson equation; elemental semiconductors; grain boundaries; silicon; thin film transistors; 1-D Poisson equation; Si; drain-induced grain barrier lowering effect; grain-boundary barrier; polysilicon thin-film transistors; quasi2D Poisson equation; Electron traps; Grain boundaries; Materials science and technology; Microelectronics; Neodymium; Poisson equations; Power engineering and energy; Semiconductor process modeling; Thin film transistors; Voltage; Analytical model; drain-induced grain barrier lowering (DIGBL) effect; polysilicon films; polysilicon thin-film transistors (poly-Si TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2002318
