A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors

Author

Wu, Wei-Jing ; Yao, Ruo-He

Author_Institution

Coll. of Mater. Sci. & Eng., South China Univ. of Technol., Guangzhou

Volume

29

Issue

10

fYear

2008

Firstpage

1128

Lastpage

1131

Abstract

Based on charge conservation assumption, analytical models of the drain-induced grain barrier lowering effect are developed for polysilicon films by 1-D Poisson´s equation and for polysilicon thin-film transistors (poly-Si TFTs) by quasi-2-D Poisson´s equation. It is shown that the voltage drop at the lower barrier side is less than that at the higher barrier side for both poly-Si films and poly-Si TFTs when applying a lateral bias across the grain-boundary barrier.

Keywords

Poisson equation; elemental semiconductors; grain boundaries; silicon; thin film transistors; 1-D Poisson equation; Si; drain-induced grain barrier lowering effect; grain-boundary barrier; polysilicon thin-film transistors; quasi2D Poisson equation; Electron traps; Grain boundaries; Materials science and technology; Microelectronics; Neodymium; Poisson equations; Power engineering and energy; Semiconductor process modeling; Thin film transistors; Voltage; Analytical model; drain-induced grain barrier lowering (DIGBL) effect; polysilicon films; polysilicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002318

Filename

4631453