Title :
Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB
Author :
Chang, Y.H. ; Peng, P.C. ; Tsai, W.K. ; Lin, G. ; FangI Lai ; Hsiao, R.S. ; Yang, H.P. ; Yu, H.C. ; Lin, K.F. ; Chi, J.Y. ; Wang, Stanley C. ; Kuo, H.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2006 12:00:00 AM
Abstract :
We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is /spl sim/330 μW with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of >30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.
Keywords :
integrated optoelectronics; laser cavity resonators; laser modes; monolithic integrated circuits; optical communication equipment; optical fibre communication; optical modulation; quantum dot lasers; surface emitting lasers; 1.3 mum; 2.5 Gbit/s; 293 to 298 K; 330 muW; GaAs; GaAs substrate; eye diagram; fully doped structure; modulation bandwidth; monolithic quantum-dot VCSEL; optical communication wavelength; room temperature; sidemode suppression ratio; single-mode VCSEL; slope efficiency; vertical-cavity surface-emitting lasers; Bandwidth; Gallium arsenide; Optical fiber communication; Optical surface waves; Power generation; Quantum dots; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers; Bandwidth; quantum dots (QDs); single mode; surface-emitting laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.871831
