Complementary Si MESFET concept using silicon-on-sapphire technology

Author

Tove, Per A. ; Bohlin, Kjell ; Masszi, Ferenc ; Norde, H ; Nylander, J ; Tiren, J ; Magnusson, U.

Author_Institution

Dept. of Electron, Inst. of Technol., Uppsala Univ., Sweden

Volume

9

Issue

1

fYear

1988

Firstpage

47

Lastpage

49

Abstract

Complementary Si MESFETs (CMES) for integrated circuits using silicon-on-sapphire are described. Not only the gate, but also the source and drain of the n-transistors and p-transistors are Schottky junctions, using very high barrier heights for the gate and low barrier heights for source and drain. Only two Schottky metals are used: one, Ir or Pt, giving a high barrier on nSi, and hence low on pSi; the other, Er or Tb, showing the opposite behavior. The basic differences between MES and MOS are pointed out and design criteria for CMES inverters using normally-off type transistors are given.<>

Keywords

Schottky gate field effect transistors; field effect integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; CMES inverters; Er; Ir; Pt; SOS complementary MESFETs; Schottky junctions; Si; Si-Al/sub 2/O/sub 3/; Tb; barrier heights; integrated circuits; n-transistors; normally-off type transistors; p-transistors; CMOS technology; Doping; Energy consumption; Erbium; MESFETs; MOSFETs; Pulse inverters; Silicon; Steady-state; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20409

Filename

20409