Improvement of Resistive Switching Characteristics in $\\hbox {SrZrO}_{3}$ Thin Films With Embedded Cr Layer

Author

Lin, Chih-Yang ; Lin, Meng-Han ; Wu, Ming-Chi ; Lin, Chen-Hsi ; Tseng, Tseung-Yuen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

29

Issue

10

fYear

2008

Firstpage

1108

Lastpage

1111

Abstract

The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO₃(SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.

Keywords

chromium; random-access storage; strontium compounds; thin film devices; zirconium compounds; Cr; SZO-based memory devices; SrZrO₃; SrZrO₃ thin films; embedded Cr layer; embedded Cr metal layer; nonvolatile memory; resistive switching properties stabilization; Chromium; Electrodes; Nonvolatile memory; Random access memory; Solvents; Strontium; Switches; Thin film devices; Transistors; Zirconium; $ hbox{SrZrO}_{3}$; Nonvolatile memory (NVM); resistive random access memory (RRAM); resistive switching; stabilization;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002879

Filename

4631455

Improvement of Resistive Switching Characteristics in Thin Films With Embedded Cr Layer

Lin, Chih-Yang ; Lin, Meng-Han ; Wu, Ming-Chi ; Lin, Chen-Hsi ; Tseng, Tseung-Yuen

jour

Improvement of Resistive Switching Characteristics in $\\hbox {SrZrO}_{3}$ Thin Films With Embedded Cr Layer