DocumentCode :
871901
Title :
The Characteristics of \\hbox {H}^{+} Ion-Sensitive Transistor Driving With MOS Hybrid Mode Operation
Author :
Kwon, Hyurk-Choon ; Kwon, Dae-Hyuk ; Sawada, Kazuaki ; Kang, Shin-Won
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu
Volume :
29
Issue :
10
fYear :
2008
Firstpage :
1138
Lastpage :
1141
Abstract :
A chemical ion sensing using a gated lateral bipolar junction transistor (LBJT) has been performed. This letter reports the basic characteristics of the proposed device and the physical differences between a pure MOSFET-based device and gated LBJT, in giving consideration to an ion sensing. The operation in the linear region, the positive polarity between input bias and output signal, and the direct proportional relationship between pH value and output signal were achieved by the bias configuration and the proposed device using an unmodified standard CMOS process. When the base current is set at -50 muA and VRG of -4 V, this device shows a sensitivity of 6.18 muA/pH.
Keywords :
bipolar transistors; ion sensitive field effect transistors; MOS hybrid mode operation; chemical transducers; gated lateral bipolar junction transistor; ion-sensitive transistor driving; CMOS process; CMOS technology; Chemicals; FETs; Hybrid junctions; Low-frequency noise; MOSFET circuits; Roentgenium; Signal processing; Transducers; Chemical transducers; gated lateral bipolar junction transistor (LBJT); ion-sensitive field-effect transistor (ISFET);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2002809
Filename :
4631460
Link To Document :
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