Title :
A Monolithic Single-Ended X-Band Mixer Circuit
fDate :
3/1/1968 12:00:00 AM
Abstract :
A monolithic single-ended X-band mixer circuit has been fabricated on a high-resistivity silicon substrate, employing selective epitaxial deposition. The final resistivities of the N-type substrates are between 5000 and 17000 ohm-cm. The mixer diode is a molybdenum-silicon Schottky barrier diode. The overall single-sideband noise figure for the circuit obtained at 9 GHz was 10.5 dB.
Keywords :
Mixers; Monolithic integrated circuits; Circuits; Distortion measurement; Frequency measurement; Frequency modulation; Pulse generation; Pulse modulation; Schottky barriers; Schottky diodes; Silicon; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1968.1049834
