Title :
Dose Dependence of Single Event Upset Rate in MOS dRAMS
Author :
Knudson, A.R. ; Campbell, A.B. ; Hammond, E.C.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Abstract :
The upset sensitivity of MOS dynamic RAMs has been found to decrease as a result of total dose irradiation, both for cobalt-60 gammas and MeV helium ions, up to the point where device failure is imminent. Device failure levels have been compared for cobalt-60 gammas, and MeV helium ions and protons. It has been found that in terms of rad(Si) necessary to cause device failure, cobalt-60 was more effective than protons which were more effective than helium ions.
Keywords :
DRAM chips; Degradation; Electron traps; Gamma rays; Helium; Laboratories; Manufacturing; Protons; Single event upset; System testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333162
