Title :
Fabry-Perot semiconductor laser injection locking
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Victoria, BC, Canada
fDate :
4/1/2006 12:00:00 AM
Abstract :
Injection locking of a semiconductor laser is studied using a Fabry-Perot (FP) model. For low injection powers the FP model gives the same results as the rate equation model. At higher injection powers, the FP laser has an unlimited injection locking bandwidth; however, regions of the bandwidth are dynamically unstable. The influence of the linewidth enhancement factor on injection locking and its stability are also studied using the FP model. Finite values of the linewidth enhancement factor lead to increased locking bandwidth, asymmetry in the locking range and a saddle-node bifurcation in the injection locked solutions, of which only lower carrier density arm has linearly stable solutions.
Keywords :
bifurcation; carrier density; laser cavity resonators; laser mode locking; laser stability; laser theory; semiconductor device models; semiconductor lasers; spectral line breadth; Fabr-Perot model; Fabry-Perot cavity; Fabry-Perot laser; carrier density arms; dynamically unstable bandwidth; injection locking; laser stability; linearly stable solutions; linewidth enhancement factor; locking bandwidth; locking range asymmetry; rate equation model; saddle-node bifurcation; semiconductor laser; Bandwidth; Bifurcation; Charge carrier density; Equations; Fabry-Perot; Injection-locked oscillators; Laser mode locking; Power lasers; Semiconductor lasers; Stability; Fabry–Perot; injection locking; laser diode; semiconductor laser (SL);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.870227