DocumentCode
872093
Title
Contribution to the study of metal contacts on semiconductor real surfaces
Author
Forlani, F. ; Minnaja, N. ; Sacchi, G.
Author_Institution
Olivetti-General Electric SpA, Direzione Progetti e Studi, Pregnana Milanese, Italy
Volume
3
Issue
5
fYear
1967
fDate
5/1/1967 12:00:00 AM
Firstpage
196
Lastpage
198
Abstract
The forward characteristics of Au-n type epitaxial Si contacts, measured at different temperatures, are interpreted in terms of a nonsilicon layer between metal and semiconductor, with a contribution of surface states. The proposed model is verified by correlating the I/V characteristics, with the potential barrier height at null bias.
Keywords
electrical conductivity; elemental semiconductors; gold; semiconductor devices; semiconductor junctions; semiconductors; silicon;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670154
Filename
4207211
Link To Document