• DocumentCode
    872137
  • Title

    Stability of strained quantum-well field-effect transistor structures

  • Author

    Peercy, Paul S. ; Dodson, B.W. ; Tsao, J.Y. ; Jones, E.D. ; Myers, David R. ; Zipperian, Thomas E. ; Dawson, L.R. ; Biefeld, R.M. ; Klem, J.F. ; Hills, C.R.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • Volume
    9
  • Issue
    12
  • fYear
    1988
  • Firstpage
    621
  • Lastpage
    623
  • Abstract
    Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing steps permissible in the integration of these devices to form complex circuits.<>
  • Keywords
    high electron mobility transistors; semiconductor quantum wells; stability; complex ICs; processing steps; quantum-well field-effect transistor structures; stability conditions; strained-layer structures; thermodynamic metastability; Annealing; Capacitive sensors; Circuits; Crystallization; Degradation; FETs; Metastasis; Quantum well devices; Quantum wells; Stability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.20415
  • Filename
    20415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872137